ordinarymagnetoresistance

由 L Baldrati 著作 · 2018 · 被引用 150 次 — Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films.

由 H van Cong 著作 · 1972 · 被引用 1 次 — path integral formulation, is applied to disordered systems and developed already in five previous papers. Two important cases are discussed within the ...

A new 2D intergranular semiconducting-magnetic material obtained by depositing magnetic clusters of permalloy in a doped Si surface, is presented.

Ordinary magnetoresistance from first-principle calculation. Magnetoresistance (MR) is the change of electrical resistance in an applied magnetic field.

Four distinct types of magnetoresistance will be reviewed here: ordinary magnetoresistance, anisotropic magnetoresistance, giant magnetoresistance, and colossal ...

Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic ...

2009年9月15日 — 1. 常磁阻(Ordinary Magnetoresistance, OMR) 對所有非磁性金屬而言，由於在磁場中受到羅倫茲力的影響，傳導電子在行進中會偏折，使得路徑變成沿曲線 ...

... ordinary magnetoresistance, OMR）。他嘗試了鐵片，發現當電流與磁力方向相同時，電阻增加，當電流與磁力成90°時，電阻降低。然後他用鎳做了同樣的實驗，發現它以同樣 ...